| Customization: | Available |
|---|---|
| After-sales Service: | Online Service |
| Function: | High Temperature Resistance |
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High-End Semiconductor Fully Automatic LLO Laser Lift-Off Machine
Product Overview
This system is a fully automated laser lift-off solution designed for the efficient and high-quality separation of GaN epitaxial layers from sapphire substrates. Utilizing a DPSS ultraviolet laser and a precisely controlled optical path, it selectively thermally decomposes the GaN buffer layer at the interface to complete the lift-off process for LED epitaxial wafers. The system supports 24/7 continuous operation, features fully automated loading/unloading, and offers low operating costs, making it ideal for high-end semiconductor manufacturing.
Using pulsed laser radiation with photon energy greater than GaN bandgap and smaller than sapphire bandgap to irradiate sapphire substrate, GaN is thermally decomposed into nitrogen gas and low melting point metal Ga (only 30 ºC) in a stable range of 900 ºC -1000 ºC, achieving the separation of GaN epitaxial layer and sapphire substrate.
Laser exfoliation technology utilizes laser energy to decompose the GaN buffer layer at the GaN/sapphire interface, thereby achieving the separation of LED epitaxial wafers from sapphire substrates. This device uses a DPSS laser and is specifically designed with an external optical path for wafer peeling, which can achieve efficient and high-quality peeling effects.
Key Features & Advantages
High Efficiency & Quality Lift-Off
Uses DPSS solid-state UV lasers for low-damage, high-yield processing.
Lift-off appearance yield ≥ 98% (e.g., 4-inch flat wafer).
Equipment utilization rate ≥ 95%, supporting stable 24/7 continuous operation.
High Automation & Flexibility
Supports fully automatic loading/unloading for 4-inch and 6-inch wafers.
Manual feeding available for 2-inch wafers.
Adjustable and storable process parameters, with log documentation and SECS/GEM interface for data traceability.
Advanced Process Control
Liftable carrier stage with zonal lift compensation to address chip warping.
Automatic laser power monitoring ensures consistent and stable lift-off results.
Two processing modes: spiral (outside-in) and linear filling.
Reliable System Design
Metal trays around the processing platform prevent debris from entering the machine.
Built-in EFU (Equipment Fan Unit) ensures a clean internal environment.
High-rigidity structure with motion stage positioning accuracy of ±1μm.
| Technical Specifications | |
| Category | Specifications |
| Laser & Optics | DPSS UV laser, Quantity: 2, Max. power ≥ 1W |
| Motion Stages | X-axis: Travel 350mm, Accuracy ±1μm |
| Y-axis: Travel 400mm, Accuracy ±1μm | |
| W-axis (Lift): Travel >5mm | |
| Galvo System | Max. scan speed: 5000mm/s |
| Processing accuracy: ±15μm | |
| Throughput | 4-inch flat wafer: ~240s/piece (excl. load/unload) |
| Monthly output: 8,870 pcs (based on 22 hrs/day, 28 days/month) | |
| Utilities | Power: 3-phase 380V±10%, 50/60Hz, 25A (Max) |
| CDA: Pressure >0.5MPa, Flow 250L/min | |
| Nitrogen (N): Pressure >0.5MPa, Purity ≥99.99% | |
| Cooling Water: Bottled purified water, replaced monthly | |
| Environment: Temp. 21-23°C±1°C, Humidity 40-70%, Cleanliness Class 1000 | |
Compatible Products
Flat wafers
Patterned Sapphire Substrate (PSS)
PSS + PVD substrates
1: 4 inch sample PSS substrate silicon wafer transfer layer
2: 4 inch sample PSS+AlN substrate silicon wafer transfer layer
3: 2 inch sample flat substrate silicon wafer transfer layer
Laser processing marks and local enlarged images
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