| Customization: | Available |
|---|---|
| After-sales Service: | 7*24 Hours |
| Function: | Abrasion Resistance, High Temperature Resistance, Anti-Corrosion |
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In the relentless pursuit of smaller, faster, and more efficient semiconductor devices, the precision of dopant activation and contact formation has become paramount. Introducing China's first mass-production 8-inch Ultra-Shallow Dopant Laser Annealing (LA) Equipment, engineered to set new standards in junction formation and backside contact performance for BSI-CCD, SiC, and next-generation wafer fabrication.
Pioneering the Market: First Domestic Green Laser Machine Ready for Mass Production
Unmatched Reliability and Consistent Stability
Ingeniously Developed Optical System with Proprietary LIET Technology
Choice of Dual Wavelengths: Green and UV Lasers Available
| Technical specification | ||
| Wafer Size | 6 inch,8 inch | |
| Spot size | X:100~500μm | Y:100~500μm |
| Max. laser energy density | Green:10J/cm2 | UV:6J/cm2 |
| Specific contact resistance | ~10-5Ω·cm2 | |
| Oxygen control | ≤10ppm | |
| Technical specification | |
| Wafer Size | 6 inch, 8 inch |
| Junction depth | ≤50nm |
| Impurity peak diffusion depth | ≤5nm |
| RS non-uniformity | <2% (WIW/WTW) |
The first in China, 8 inch mass production equipment
Precise energy density control
UV laser with low penetration depth
1D top hat beam with large lengh/width ratio
Low dopant diffusion
The EFEM system pre-positions the wafer, a customized laser annealing head and precision motion platform work together to anneal the entire SiC wafer backside metal (Ni or T layer), ensuring good ohmic contact, reduced contact resistance, and improved device performance.
Product Advantages
Specifically designed for BSI-CCD wafer manufacturing, our system activates dopants in ultra-shallow junctions with minimal diffusion. This is essential for enhancing photon sensitivity and reducing crosstalk in backside-illuminated image sensors, directly improving pixel performance and chip yield.
The system excels in annealing SiC wafer backside metal layers (such as Ni or Ti). The precise, high-energy laser treatment optimally alloys the metal with SiC, forming a uniform, low-resistance ohmic contact. This process drastically reduces contact resistance to < 10-5 Ω·cm², which is vital for maximizing the performance and efficiency of high-power SiC devices.
Founded in 2019, Jiangsu Himalaya Semiconductor Co., Ltd. excels in the global semiconductor equipment trade, boasting a solid presence in over 30 countries. With a prestigious network of over 200 clients and partners, we specialize in sourcing the most cost-effective, high-quality products for our clients. Our commitment to excellence ensures seamless transactions and risk mitigation for our suppliers.
Our premier product lineup includes Die Bonders, Wire Bonding systems, Laser Marking (ID IC Wafer), Laser Grooving, Laser Cutting for Glass Ceramics and Wafers Packaging, Laser Internal Modification Machines for Si/Sic and Lt/Ln Wafers, Laser Annealing Machines for Si/Sic, and Automatic Dicing Saw Machines for Wafer Packaging, along with Automatic Silicone Dispensing Equipment.
Q1:How to choose a suitable machine?
A1:You can tell us the working piece material, size, and the request of machine function. We can recommend the most suitable machine according to our experience.
Q2:What is the warranty period for the equipment?
A2:One year warranty and 24 hours online professional technical support.
Q3:Why choose us?
A3:OEM/ODM Designing
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