Advanced Laser Stealth Dicing/Cutting Equipment for Semiconductor Wafers
| Customization: | Available |
|---|---|
| After-sales Service: | Support Online Training and on-Site Equipment Tech |
| Function: | Complies with Semiconductor Industry Technical Sta |
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Basic Info.
- Model NO.
- Himalaya-6688-11
- Demoulding
- Automatic
- Condition
- New
- Certification
- ISO, CE
- Warranty
- 12 Months
- Automatic Grade
- Automatic
- Installation
- Vertical
- Driven Type
- Electric
- Mould Life
- 8000h
- Wavelength
- Ultraviolet
- Output Power
- < 20 W
- Repetition Rate
- 0 - 200 kHz
- Wafer Sizes
- 4", 6", 8"
- Wafer Thickness
- 50 to 750 Micron
- Max. Processing Speed
- 1000 mm/S
- X/Y Positioning Accuracy
- ± 1 Um
- Rotation Angle
- 210°
- Platform Flatness
- ≤ ± 5 Um (Within 200 mm)
- Transport Package
- Complies with International Logistics Standards
- Specification
- 1400 x2400x 2440 (including tricolor light)
- Trademark
- Himalaya
- Origin
- China
- Production Capacity
- 100
Product Description
Complete SiC (Silicon Carbide) Wafer Laser Cutting Solution
This integrated solution is engineered for high-precision, high-efficiency, and high-yield processing of brittle silicon carbide materials. The system comprises three core pieces of equipment to handle the entire production workflow: Laser Back Metal Slotting Equipment, Laser Stealth (Invisible) Cutting Equipment, and a Fully Automatic Splitting (Dicing) Equipment.
Core Value Proposition
This solution is specifically designed for the challenging characteristics of SiC wafers. By utilizing ultraviolet lasers, a specialized external optical path system, high-precision CCD imaging, and advanced motion control, it achieves precise, efficient cutting with minimal residue and exceptional edge quality (low chipping).
Key Features & Advantages
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Multi-Beam Technology: Enables high-speed, high-quality processing for superior throughput.
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Full Automation: Features fully automatic loading/unloading, gluing, and cleaning functions for unmanned operation and high throughput.
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High Compatibility: Fully compatible with 2-inch, 4-inch, 6-inch, and 8-inch wafer formats.
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Ultra-High Precision: The motion platform boasts exceptional straightness and repeatability within ±1µm.
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DRA Auto-Focus System: A non-contact, real-time focusing system that dynamically adjusts the laser focal point to maintain a consistent modified layer depth, even with wafer thickness variations (tolerates ±10µm).
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Dual Cutting Modes: Equipped with both front-side ("tangent") and back-side ("back cutting") laser processing capabilities for flexible process integration.
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Integrated Splitting: Includes a high-precision vacuum cracking or blade splitting system that ensures a clean break along the laser-modified path, achieving yields exceeding 99.6%.
The complete solution of SIC laser cutting includes: laser back metal slotting equipment, laser invisible cutting equipment, and fully automatic splitting equipment
This series of equipment is designed for the characteristics of silicon substrate wafer laser cutting, using ultraviolet lasers. A set of external optical path system is specially designed, combined with a high-precision CCD imaging positioning system and high-precision platform motion control, to achieve precision, efficiency, and almost no residue in the cutting groove cutting effect.
1. Multi spot cutting technology for efficient and high-quality processing
2. Fully automatic loading and unloading, unmanned and fully automatic operation
3. Compatible with the production of 2-inch, 4-inch, and 6-inch chips
4. Equipped with automatic gluing and cleaning functions
5. The platform's straightness and repeatability are both within 1um
6. Equipped with tangent and back cutting functions
Fully automatic SIC wafer laser cutting machine
Silicon carbide (SiC) has a wide range of applications, and if silicon carbide components become popular, power conversion devices will
Significant changes have occurred. Can be used for hybrid electric vehicles, air conditioners, and other white goods, as well as solar power generation
Distributed power supply systems such as electricity, wind power generation, fuel cells, industrial equipment, as well as general frequency converter devices and general switchesTurn off the power and other aspects.
Key Features & Competitive Advantages
-
High Material Compatibility: Fully compatible with 4-inch, 6-inch, and 8-inch wafer production lines.
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Superior Process Stability: Equipped with high-efficiency imported lasers ensuring consistent and reliable process results.
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Real-Time Focus Control: Integrated DRA Self-Tracking System performs non-contact measurement and adjusts the laser focus in real-time according to film thickness variations, guaranteeing optimal cutting depth throughout the process.
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Advanced Vision System: High-precision CCD with infrared imaging capabilities enables micron-level positioning for both forward and backward cutting paths.
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Dual Cleavage Options: Supports both blade cleavage and vacuum cracking systems. The vacuum system is optimized for small-grain products to ensure high film expansion yield.
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Proprietary Optical Design: A unique optical system module prevents back-side silicon crystal confinement melting, significantly improving the quality of the laser-modified (SD) layer compared to foreign counterparts.
Technical Specifications
Laser System:
-
Output Wavelength: Infrared Band (typical for SiC stealth dicing)
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Repetition Rate: 50 - 200 kHz
Motion Platform:
-
X/Y Stroke: 600 × 600 mm
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Positioning Accuracy: ± 0.005 mm
-
Travel Speed: Up to 1000 mm/s
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Straightness: ± 0.002 mm / 250 mm
DRA Auto-Focus System:
-
Function: Real-time focus adjustment during cutting.
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Performance: Maintains a consistent modified layer depth, allowing for film thickness errors within ±10 µm and cutting depth error within ±5 µm.
Cleavage System (Blade):
-
Blade Width: ~5 µm
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Support Platform Flatness: < 5 µm
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Core Axis Positioning Accuracy (for cleavage): < 2 µm
Processing Workflow
The process is a two-step "Laser-Modify-and-Cleave" method:
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Laser Internal Modification (Stealth Dicing):
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A pulsed IR laser is focused inside the SiC wafer, creating a continuous layer of modified material (a perforation line) without affecting the surface.
-
The DRA system ensures this modified layer is perfectly placed regardless of wafer thickness variations.
-
-
Cleavage / Splitting:
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Method A (Blade Cleavage): A ultra-thin blade (5µm) is precisely aligned to the laser path using a high-precision visual system. It applies a quick, localized force to fracture the wafer along the pre-weakened laser line.
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Method B (Vacuum Cracking): A vacuum force is applied to expand a protective film mounted on the wafer, mechanically pulling the wafer apart along the laser scribe lines. Ideal for delicate, small-grain products.
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Silicon Carbide-Specific Processing Plan & Yield Protection
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Orientation: Chip-facing upwards.
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Precision Cleavage: The chopping knife acts directly on the chip with visual positioning, ensuring contact is only made within the pre-defined scratch path.
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Front-Side Protection: To further protect the wafer and reduce edge chipping risk, a 25µm non-adhesive protective film can be applied to the front side. This prevents direct blade contact and dissipates pressure away from the cutting path.
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High Yield: This technology, proven in silicon, sapphire, and glass industries, achieves yields exceeding 99.6%. It offers superior positioning accuracy, effectively reduces edge collapse, and eliminates incomplete or twin-crystal fractures.
| NO | project | parameter |
| 1 | Machinable crystal boundary size | 4inch,6inch,8inch |
| 2 | Processing crystal boundary thickness | 50~750μm |
| 3 | Processing speed | maximum1000mm/s |
| 4 | Laser output power | <20W |
| 5 | repetitive frequency | 0~200KHz |
| 6 | X.Y-axis accuracy | Repetitive positioning accuracy:±1μ M X-axis straightness:±1μ M/300mm |
| 7 | X.Y-axis maximum machining range | 300mm×300mm |
| 8 | Z-axis repeated accuracy error | ±1μm |
| 9 | θ axis | Rotation angle:210° Rotation resolution:15arc sec |
| 10 | Platform flatness | ≤±5um(within 200mm range) |
| 11 | CCD discrimination function | Angle,horizontal,benchmark calibration,CCD light source brightness self adjustment |
| 12 | Identification system | HANSLASER |
| NO | project | Regulations |
| 1 | ambient temperature | 22ºC±2ºC |
| 2 | relative humidity | 30~60% |
| 3 | Cleanliness requirements | 10000 level or above |
| 4 | Atmospheric pressure (CDA) |
0.5-0.8Mpa |
| 5 | power supply | Single phase 220V,50Hz,above 16A |
| 6 | Grid ground wire | Complies with the national standard requirements of the computer room |
| 7 | Power grid fluctuation | <5% |
| 8 | Equipment size | 1400(L)mm×2200(W)mm×2180(H)mm |
| 9 | Equipment weight | About 3 tons |
| 10 | Occasions to avoid | 1.Places witha lotof garbage,dust,and oil mist; 2.Places with high vibrations and impacts; 3.Places that can reach drugs and flammable and explosive materials; 4.Places near high-frequency interference sources; 5.Places where temperature changes rapidly, 6.In environments with high concentrations of CO2,NOX,SOX,etc. |
The complete solution of SIC laser cutting includes: laser back metal slotting equipment, laser invisible cutting equipment, and fully automatic splitting equipment
Customer Commitment & After-Sales Support
1-Year Comprehensive Warranty
Coverage: Full protection against manufacturing defects (parts/labor included).
Extensions: Optional extended warranty plans available for critical applications.
24/7 Global Technical Support
Response: ≤1-hour emergency response via dedicated hotline/TeamViewer.
Languages: Multilingual engineers (English/Chinese/German/Japanese).
On-Site: Rapid dispatch for unresolved issues (72hrs max for Tier-1 regions).
Value-Added Services
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