| Customization: | Available |
|---|---|
| After-sales Service: | 1 Year |
| Function: | High Temperature Resistance |
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This integrated solution is engineered for high-precision, high-efficiency, and high-yield processing of brittle silicon carbide materials. The system comprises three core pieces of equipment to handle the entire production workflow: Laser Back Metal Slotting Equipment, Laser Stealth (Invisible) Cutting Equipment, and a Fully Automatic Splitting (Dicing) Equipment.
This solution is specifically designed for the challenging characteristics of SiC wafers. By utilizing ultraviolet lasers, a specialized external optical path system, high-precision CCD imaging, and advanced motion control, it achieves precise, efficient cutting with minimal residue and exceptional edge quality (low chipping).
Multi-Beam Technology: Enables high-speed, high-quality processing for superior throughput.
Full Automation: Features fully automatic loading/unloading, gluing, and cleaning functions for unmanned operation and high throughput.
High Compatibility: Fully compatible with 2-inch, 4-inch, 6-inch, and 8-inch wafer formats.
Ultra-High Precision: The motion platform boasts exceptional straightness and repeatability within ±1µm.
DRA Auto-Focus System: A non-contact, real-time focusing system that dynamically adjusts the laser focal point to maintain a consistent modified layer depth, even with wafer thickness variations (tolerates ±10µm).
Dual Cutting Modes: Equipped with both front-side ("tangent") and back-side ("back cutting") laser processing capabilities for flexible process integration.
Integrated Splitting: Includes a high-precision vacuum cracking or blade splitting system that ensures a clean break along the laser-modified path, achieving yields exceeding 99.6%.
Key Advantages (Summary)
High Throughput: 10% higher UPH compared to AR9000, achieving 98% of DISCO's efficiency.
Improved Process Quality: Optimized for various semiconductor materials (Si, SiC, HBM) using high-speed spindles.
Enhanced Usability: Redesigned software architecture for better user interaction and maintainability.
Physical & Core Technical Attributes
| Physical & Core Technical Attributes | |
| Attribute Category | Specification |
| Spindle System | |
| Type | Dual Spindle |
| Power Options | 1.2 / 1.8 / 2.4 / 3.0 kW |
| Maximum Speed | 60,000 rpm |
| Axis Parameters | |
| Y1 / Y2 Axis | |
| Step Increment | 0.0001 mm |
| Positioning Accuracy | ≤ 0.002 mm |
| Travel Range | 310 mm |
| X Axis | |
| Feed Rate Range | Not Specified |
| Z1 / Z2 Axis | |
| Positioning Accuracy | Not Specified |
| Rotation Speed (Cleaning) | 100 - 3,000 rpm |
| Cleaning Station | |
| Cleaning Method | Fully Automatic Rinse & Spin-dry |
| Spin Speed Range | 100 - 3,000 rpm |
| Power Supply | |
| Voltage / Phase / Frequency | 380 V / 3 Phase / 50 Hz |
High Material Compatibility: Fully compatible with 4-inch, 6-inch, and 8-inch wafer production lines.
Superior Process Stability: Equipped with high-efficiency imported lasers ensuring consistent and reliable process results.
Real-Time Focus Control: Integrated DRA Self-Tracking System performs non-contact measurement and adjusts the laser focus in real-time according to film thickness variations, guaranteeing optimal cutting depth throughout the process.
Advanced Vision System: High-precision CCD with infrared imaging capabilities enables micron-level positioning for both forward and backward cutting paths.
Dual Cleavage Options: Supports both blade cleavage and vacuum cracking systems. The vacuum system is optimized for small-grain products to ensure high film expansion yield.
Proprietary Optical Design: A unique optical system module prevents back-side silicon crystal confinement melting, significantly improving the quality of the laser-modified (SD) layer compared to foreign counterparts.
Laser System:
Output Wavelength: Infrared Band (typical for SiC stealth dicing)
Repetition Rate: 50 - 200 kHz
Motion Platform:
X/Y Stroke: 600 × 600 mm
Positioning Accuracy: ± 0.005 mm
Travel Speed: Up to 1000 mm/s
Straightness: ± 0.002 mm / 250 mm
DRA Auto-Focus System:
Function: Real-time focus adjustment during cutting.
Performance: Maintains a consistent modified layer depth, allowing for film thickness errors within ±10 µm and cutting depth error within ±5 µm.
Cleavage System (Blade):
Blade Width: ~5 µm
Support Platform Flatness: < 5 µm
Core Axis Positioning Accuracy (for cleavage): < 2 µm
The process is a two-step "Laser-Modify-and-Cleave" method:
Laser Internal Modification (Stealth Dicing):
A pulsed IR laser is focused inside the SiC wafer, creating a continuous layer of modified material (a perforation line) without affecting the surface.
The DRA system ensures this modified layer is perfectly placed regardless of wafer thickness variations.
Cleavage / Splitting:
Method A (Blade Cleavage): A ultra-thin blade (5µm) is precisely aligned to the laser path using a high-precision visual system. It applies a quick, localized force to fracture the wafer along the pre-weakened laser line.
Method B (Vacuum Cracking): A vacuum force is applied to expand a protective film mounted on the wafer, mechanically pulling the wafer apart along the laser scribe lines. Ideal for delicate, small-grain products.
Orientation: Chip-facing upwards.
Precision Cleavage: The chopping knife acts directly on the chip with visual positioning, ensuring contact is only made within the pre-defined scratch path.
Front-Side Protection: To further protect the wafer and reduce edge chipping risk, a 25µm non-adhesive protective film can be applied to the front side. This prevents direct blade contact and dissipates pressure away from the cutting path.
High Yield: This technology, proven in silicon, sapphire, and glass industries, achieves yields exceeding 99.6%. It offers superior positioning accuracy, effectively reduces edge collapse, and eliminates incomplete or twin-crystal fractures.
High Material Compatibility: Fully compatible with 4-inch, 6-inch, and 8-inch wafer production lines.
Superior Process Stability: Equipped with high-efficiency imported lasers ensuring consistent and reliable process results.
Real-Time Focus Control: Integrated DRA Self-Tracking System performs non-contact measurement and adjusts the laser focus in real-time according to film thickness variations, guaranteeing optimal cutting depth throughout the process.
Advanced Vision System: High-precision CCD with infrared imaging capabilities enables micron-level positioning for both forward and backward cutting paths.
Dual Cleavage Options: Supports both blade cleavage and vacuum cracking systems. The vacuum system is optimized for small-grain products to ensure high film expansion yield.
Proprietary Optical Design: A unique optical system module prevents back-side silicon crystal confinement melting, significantly improving the quality of the laser-modified (SD) layer compared to foreign counterparts.
Laser System:
Output Wavelength: Infrared Band (typical for SiC stealth dicing)
Repetition Rate: 50 - 200 kHz
Motion Platform:
X/Y Stroke: 600 × 600 mm
Positioning Accuracy: ± 0.005 mm
Travel Speed: Up to 1000 mm/s
Straightness: ± 0.002 mm / 250 mm
DRA Auto-Focus System:
Function: Real-time focus adjustment during cutting.
Performance: Maintains a consistent modified layer depth, allowing for film thickness errors within ±10 µm and cutting depth error within ±5 µm.
Cleavage System (Blade):
Blade Width: ~5 µm
Support Platform Flatness: < 5 µm
Core Axis Positioning Accuracy (for cleavage): < 2 µm
The process is a two-step "Laser-Modify-and-Cleave" method:
Laser Internal Modification (Stealth Dicing):
A pulsed IR laser is focused inside the SiC wafer, creating a continuous layer of modified material (a perforation line) without affecting the surface.
The DRA system ensures this modified layer is perfectly placed regardless of wafer thickness variations.
Cleavage / Splitting:
Method A (Blade Cleavage): A ultra-thin blade (5µm) is precisely aligned to the laser path using a high-precision visual system. It applies a quick, localized force to fracture the wafer along the pre-weakened laser line.
Method B (Vacuum Cracking): A vacuum force is applied to expand a protective film mounted on the wafer, mechanically pulling the wafer apart along the laser scribe lines. Ideal for delicate, small-grain products.
Orientation: Chip-facing upwards.
Precision Cleavage: The chopping knife acts directly on the chip with visual positioning, ensuring contact is only made within the pre-defined scratch path.
Front-Side Protection: To further protect the wafer and reduce edge chipping risk, a 25µm non-adhesive protective film can be applied to the front side. This prevents direct blade contact and dissipates pressure away from the cutting path.
High Yield: This technology, proven in silicon, sapphire, and glass industries, achieves yields exceeding 99.6%. It offers superior positioning accuracy, effectively reduces edge collapse, and eliminates incomplete or twin-crystal fractures.
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