Precision Semiconductor Wafer Dicing with Advanced Stealth Technology

Product Description

Product Description

Complete SiC (Silicon Carbide) Wafer Laser Cutting Solution

This integrated solution is engineered for high-precision, high-efficiency, and high-yield processing of brittle silicon carbide materials. The system comprises three core pieces of equipment to handle the entire production workflow: Laser Back Metal Slotting Equipment, Laser Stealth (Invisible) Cutting Equipment, and a Fully Automatic Splitting (Dicing) Equipment.

Core Value Proposition

This solution is specifically designed for the challenging characteristics of SiC wafers. By utilizing ultraviolet lasers, a specialized external optical path system, high-precision CCD imaging, and advanced motion control, it achieves precise, efficient cutting with minimal residue and exceptional edge quality (low chipping).

Key Features & Advantages

• Multi-Beam Technology: Enables high-speed, high-quality processing for superior throughput.

• Full Automation: Features fully automatic loading/unloading, gluing, and cleaning functions for unmanned operation and high throughput.

• High Compatibility: Fully compatible with 2-inch, 4-inch, 6-inch, and 8-inch wafer formats.

• Ultra-High Precision: The motion platform boasts exceptional straightness and repeatability within ±1µm.

• DRA Auto-Focus System: A non-contact, real-time focusing system that dynamically adjusts the laser focal point to maintain a consistent modified layer depth, even with wafer thickness variations (tolerates ±10µm).

• Dual Cutting Modes: Equipped with both front-side ("tangent") and back-side ("back cutting") laser processing capabilities for flexible process integration.

• Integrated Splitting: Includes a high-precision vacuum cracking or blade splitting system that ensures a clean break along the laser-modified path, achieving yields exceeding 99.6%.

The complete solution of SIC laser cutting includes: laser back metal slotting equipment, laser invisible cutting equipment, and fully automatic splitting equipment

Product Parameters

Key Advantages (Summary)

• High Throughput: 10% higher UPH compared to AR9000, achieving 98% of DISCO's efficiency.

• Improved Process Quality: Optimized for various semiconductor materials (Si, SiC, HBM) using high-speed spindles.

• Enhanced Usability: Redesigned software architecture for better user interaction and maintainability.

Physical & Core Technical Attributes

 

 

Physical & Core Technical Attributes
Attribute Category	Specification
Spindle System
Type	Dual Spindle
Power Options	1.2 / 1.8 / 2.4 / 3.0 kW
Maximum Speed	60,000 rpm
Axis Parameters
Y1 / Y2 Axis
Step Increment	0.0001 mm
Positioning Accuracy	≤ 0.002 mm
Travel Range	310 mm
X Axis
Feed Rate Range	Not Specified
Z1 / Z2 Axis
Positioning Accuracy	Not Specified
Rotation Speed (Cleaning)	100 - 3,000 rpm
Cleaning Station
Cleaning Method	Fully Automatic Rinse & Spin-dry
Spin Speed Range	100 - 3,000 rpm
Power Supply
Voltage / Phase / Frequency	380 V / 3 Phase / 50 Hz

This series of equipment is designed for the characteristics of silicon substrate wafer laser cutting, using ultraviolet lasers. A set of external optical path system is specially designed, combined with a high-precision CCD imaging positioning system and high-precision platform motion control, to achieve precision, efficiency, and almost no residue in the cutting groove cutting effect.
1. Multi spot cutting technology for efficient and high-quality processing
2. Fully automatic loading and unloading, unmanned and fully automatic operation
3. Compatible with the production of 2-inch, 4-inch, and 6-inch chips
4. Equipped with automatic gluing and cleaning functions
5. The platform's straightness and repeatability are both within 1um
6. Equipped with tangent and back cutting functions
 

Fully automatic SIC wafer laser cutting machine
Silicon carbide (SiC) has a wide range of applications, and if silicon carbide components become popular, power conversion devices will
Significant changes have occurred. Can be used for hybrid electric vehicles, air conditioners, and other white goods, as well as solar power generation
Distributed power supply systems such as electricity, wind power generation, fuel cells, industrial equipment, as well as general frequency converter devices and general switchesTurn off the power and other aspects.
 

Applications

 

Key Features & Competitive Advantages

• High Material Compatibility: Fully compatible with 4-inch, 6-inch, and 8-inch wafer production lines.

• Superior Process Stability: Equipped with high-efficiency imported lasers ensuring consistent and reliable process results.

• Real-Time Focus Control: Integrated DRA Self-Tracking System performs non-contact measurement and adjusts the laser focus in real-time according to film thickness variations, guaranteeing optimal cutting depth throughout the process.

• Advanced Vision System: High-precision CCD with infrared imaging capabilities enables micron-level positioning for both forward and backward cutting paths.

• Dual Cleavage Options: Supports both blade cleavage and vacuum cracking systems. The vacuum system is optimized for small-grain products to ensure high film expansion yield.

• Proprietary Optical Design: A unique optical system module prevents back-side silicon crystal confinement melting, significantly improving the quality of the laser-modified (SD) layer compared to foreign counterparts.

 

Technical Specifications

Laser System:

• Output Wavelength: Infrared Band (typical for SiC stealth dicing)

• Repetition Rate: 50 - 200 kHz

Motion Platform:

• X/Y Stroke: 600 × 600 mm

• Positioning Accuracy: ± 0.005 mm

• Travel Speed: Up to 1000 mm/s

• Straightness: ± 0.002 mm / 250 mm

DRA Auto-Focus System:

• Function: Real-time focus adjustment during cutting.

• Performance: Maintains a consistent modified layer depth, allowing for film thickness errors within ±10 µm and cutting depth error within ±5 µm.

Cleavage System (Blade):

• Blade Width: ~5 µm

• Support Platform Flatness: < 5 µm

• Core Axis Positioning Accuracy (for cleavage): < 2 µm

 

Processing Workflow

The process is a two-step "Laser-Modify-and-Cleave" method:

1. Laser Internal Modification (Stealth Dicing):

   • A pulsed IR laser is focused inside the SiC wafer, creating a continuous layer of modified material (a perforation line) without affecting the surface.

   • The DRA system ensures this modified layer is perfectly placed regardless of wafer thickness variations.

2. Cleavage / Splitting:

   • Method A (Blade Cleavage): A ultra-thin blade (5µm) is precisely aligned to the laser path using a high-precision visual system. It applies a quick, localized force to fracture the wafer along the pre-weakened laser line.

   • Method B (Vacuum Cracking): A vacuum force is applied to expand a protective film mounted on the wafer, mechanically pulling the wafer apart along the laser scribe lines. Ideal for delicate, small-grain products.

 

Silicon Carbide-Specific Processing Plan & Yield Protection

• Orientation: Chip-facing upwards.

• Precision Cleavage: The chopping knife acts directly on the chip with visual positioning, ensuring contact is only made within the pre-defined scratch path.

• Front-Side Protection: To further protect the wafer and reduce edge chipping risk, a 25µm non-adhesive protective film can be applied to the front side. This prevents direct blade contact and dissipates pressure away from the cutting path.

• High Yield: This technology, proven in silicon, sapphire, and glass industries, achieves yields exceeding 99.6%. It offers superior positioning accuracy, effectively reduces edge collapse, and eliminates incomplete or twin-crystal fractures.

 

 

This series of equipment is designed for the characteristics of silicon substrate wafer laser cutting, using ultraviolet lasers. A set of external optical path system is specially designed, combined with a high-precision CCD imaging positioning system and high-precision platform motion control, to achieve precision, efficiency, and almost no residue in the cutting groove cutting effect.
1. Multi spot cutting technology for efficient and high-quality processing
2. Fully automatic loading and unloading, unmanned and fully automatic operation
3. Compatible with the production of 2-inch, 4-inch, and 6-inch chips
4. Equipped with automatic gluing and cleaning functions
5. The platform's straightness and repeatability are both within 1um
6. Equipped with tangent and back cutting functions
 

Fully automatic SIC wafer laser cutting machine
Silicon carbide (SiC) has a wide range of applications, and if silicon carbide components become popular, power conversion devices will
Significant changes have occurred. Can be used for hybrid electric vehicles, air conditioners, and other white goods, as well as solar power generation
Distributed power supply systems such as electricity, wind power generation, fuel cells, industrial equipment, as well as general frequency converter devices and general switchesTurn off the power and other aspects.
 

Specification

 

 

Key Features & Competitive Advantages

• High Material Compatibility: Fully compatible with 4-inch, 6-inch, and 8-inch wafer production lines.

• Superior Process Stability: Equipped with high-efficiency imported lasers ensuring consistent and reliable process results.

• Real-Time Focus Control: Integrated DRA Self-Tracking System performs non-contact measurement and adjusts the laser focus in real-time according to film thickness variations, guaranteeing optimal cutting depth throughout the process.

• Advanced Vision System: High-precision CCD with infrared imaging capabilities enables micron-level positioning for both forward and backward cutting paths.

• Dual Cleavage Options: Supports both blade cleavage and vacuum cracking systems. The vacuum system is optimized for small-grain products to ensure high film expansion yield.

• Proprietary Optical Design: A unique optical system module prevents back-side silicon crystal confinement melting, significantly improving the quality of the laser-modified (SD) layer compared to foreign counterparts.

 

Technical Specifications

Laser System:

• Output Wavelength: Infrared Band (typical for SiC stealth dicing)

• Repetition Rate: 50 - 200 kHz

Motion Platform:

• X/Y Stroke: 600 × 600 mm

• Positioning Accuracy: ± 0.005 mm

• Travel Speed: Up to 1000 mm/s

• Straightness: ± 0.002 mm / 250 mm

DRA Auto-Focus System:

• Function: Real-time focus adjustment during cutting.

• Performance: Maintains a consistent modified layer depth, allowing for film thickness errors within ±10 µm and cutting depth error within ±5 µm.

Cleavage System (Blade):

• Blade Width: ~5 µm

• Support Platform Flatness: < 5 µm

• Core Axis Positioning Accuracy (for cleavage): < 2 µm

 

Processing Workflow

The process is a two-step "Laser-Modify-and-Cleave" method:

1. Laser Internal Modification (Stealth Dicing):

   • A pulsed IR laser is focused inside the SiC wafer, creating a continuous layer of modified material (a perforation line) without affecting the surface.

   • The DRA system ensures this modified layer is perfectly placed regardless of wafer thickness variations.

2. Cleavage / Splitting:

   • Method A (Blade Cleavage): A ultra-thin blade (5µm) is precisely aligned to the laser path using a high-precision visual system. It applies a quick, localized force to fracture the wafer along the pre-weakened laser line.

   • Method B (Vacuum Cracking): A vacuum force is applied to expand a protective film mounted on the wafer, mechanically pulling the wafer apart along the laser scribe lines. Ideal for delicate, small-grain products.

 

Silicon Carbide-Specific Processing Plan & Yield Protection

• Orientation: Chip-facing upwards.

• Precision Cleavage: The chopping knife acts directly on the chip with visual positioning, ensuring contact is only made within the pre-defined scratch path.

• Front-Side Protection: To further protect the wafer and reduce edge chipping risk, a 25µm non-adhesive protective film can be applied to the front side. This prevents direct blade contact and dissipates pressure away from the cutting path.

• High Yield: This technology, proven in silicon, sapphire, and glass industries, achieves yields exceeding 99.6%. It offers superior positioning accuracy, effectively reduces edge collapse, and eliminates incomplete or twin-crystal fractures.