| Customization: | Available |
|---|---|
| After-sales Service: | 7*24 Hours |
| Function: | High Temperature Resistance, Anti-Corrosion, Wafer Cleaning |
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Our advanced Plasma Asher systems offer a superior, dry process for the high-precision removal of organic materials and photoresist stripping in semiconductor, MEMS, and advanced packaging applications. Utilizing two distinct plasma generation technologies-RF and Microwave-our systems provide unmatched flexibility and performance to meet a wide range of research and production needs.
Key Features & Advantages:
Dual Plasma Source Technology: Choose the optimal plasma for your process:
RF Plasma Source (1000W): Delivers a highly uniform, isotropic etch ideal for gentle and thorough stripping of organics and delicate surface cleaning.
Microwave Plasma Source (1250W): Generates a high-density plasma for faster stripping rates and efficient surface activation, excellent for challenging residues.
Key Features & Advantages:
Dual Plasma Source Technology: Choose the optimal plasma for your process:
RF Plasma Source (1000W): Delivers a highly uniform, isotropic etch ideal for gentle and thorough stripping of organics and delicate surface cleaning.
Microwave Plasma Source (1250W): Generates a high-density plasma for faster stripping rates and efficient surface activation, excellent for challenging residues.
High-Capacity Processing: Engineered for maximum throughput, a single cycle can process up to fifty 4-6 inch wafers or twenty-five 8 inch wafers, making it suitable for both R&D pilot lines and small-to-medium volume production.
Broad Applicability: Designed to handle substrates from 4 inches to 8 inches in diameter, ensuring compatibility with a wide array of wafer sizes and other flat substrates.
PC-Based Intelligent Control: The system is managed via an integrated PC, providing an intuitive user interface for precise control over process parameters (e.g., power, time, gas flow), recipe management, and data logging for repeatability and quality assurance.
| Category | Specification |
|---|---|
| Key Process Applications | • Descum & Photoresist Stripping • Low-Temperature PR Stripping • Bottom Anti-Reflective Coating (BARC) Removal • Carbon Film Removal • Surface Plasma Cleaning & Activation |
| Wafer Size Compatibility | Up to and including 8-inch (200mm) wafers |
| Supported Substrate Materials | • Semiconductors: Silicon (Si), Gallium Arsenide (GaAs) • Compound Semiconductors: Silicon Carbide (SiC), Gallium Nitride (GaN) • Insulators & Wafers: Sapphire, Quartz Glass, Fused Silica |
Jiangsu Himalaya Semiconductor Co., Ltd. specializes in advanced plasma stripping solutions designed for the modern semiconductor fab. Our plasma stripper (asher) offers a superior, dry process for high-efficiency photoresist and organic residue removal, ensuring exceptional cleanliness and surface integrity for wafers up to 8 inches.
Key Features:
Versatile Processing: Expertly handles descum, low-temperature stripping, carbon film removal, and surface activation.
Broad Material Compatibility: Engineered for silicon, SiC, GaN, GaAs, sapphire, and quartz glass substrates.
We are an ISO 9001-certified manufacturer and innovator specializing in semiconductor equipment, with 6 registered utility model patents (UM Patents) in China. Our patented technologies cover:
Semiconductor annealing systems
Cleaning equipment for semiconductor etching
UV debonding machines
And more .
Backed by ISO 9001 quality management, we ensure high precision, reliability, and efficiency in semiconductor manufacturing processes. Our R&D-driven solutions enhance production yield and cost-effectiveness for global clients in IC packaging, MEMS, and advanced wafer processing.
Q1: What is plasma stripping (ashing) and how does it work?
A: Plasma stripping, or ashing, is a dry process that uses ionized gas (plasma) to remove organic materials like photoresist, polymers, and carbon-based films from a wafer surface. The plasma reacts with the contaminants, converting them into volatile gases that are evacuated by the vacuum system, leaving a clean surface without using wet chemicals.
Q2: What is the difference between RF and Microwave plasma sources on your models?
A: Both are highly effective. Our RF Plasma is excellent for uniform, isotropic etching and is very gentle on delicate structures. Our Microwave Plasma generates a higher density plasma, often resulting in faster strip rates for more challenging residues. The choice depends on your specific application and throughput requirements.
Q3: What materials can be processed in your plasma asher?
A: Our systems are compatible with a wide range of substrates, including Silicon (Si), Silicon Carbide (SiC), Gallium Nitride (GaN), Gallium Arsenide (GaAs), Sapphire, and Quartz Glass.
Q4: What are the main applications of your plasma stripper?
A: Key applications include:
Photoresist stripping (including after ion implant)
Descum (removing residual scum in developed patterns)
Low-temperature stripping for sensitive devices
Bottom Anti-Reflective Coating (BARC) removal
Carbon film etching
Surface cleaning and activation for improved adhesion
Q5: What is the maximum wafer size you support?
A: Our standard systems are designed to process wafers up to and including 8 inches (200mm) in diameter.
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