| Customization: | Available |
|---|---|
| After-sales Service: | Support Online Training and on-Site Equipment Tech |
| Function: | Complies with Semiconductor Industry Technical Sta |
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The DS9260 is a 12-inch fully automatic precision dicing machine, featuring a high-power dual-spindle design and equipped with a Non-Contact Measurement System (NCS) and a dedicated microscope. It enables fully automated wafer processing, including loading, alignment, dicing, cleaning, and unloading, significantly improving production efficiency.
Dual-Spindle Configuration: High-power opposing dual spindles with NCS and a dedicated microscope on the Z1 axis.
Full Automation: Integrated process from loading and alignment to dicing, cleaning, and unloading.
Intelligent Detection Systems:
Non-Contact Measurement System (NCS)
Blade Detection Function
Blade Damage Detection (BBD)
Workpiece Shape Recognition
Optional Data Scanning and Input Function
LED Packaging
QFN/BGA Packaging
Optoelectronics
Communication Devices
Wafer Manufacturing
Temperature: 20-25°C (Fluctuation ≤ ±1°C)
Humidity: 40-60%, constant and condensation-free
Compressed Air: Dew point ≤ -15°C, residual oil ≤ 0.1 ppm, filtration precision ≥ 0.01 μm/99.5%
Water System: Dicing water temperature ±2°C, cooling water temperature matching room temperature
Installation Requirements: Waterproof flooring, drainage facilities, and away from vibration sources
Power Supply: AC 380V, 50/60 Hz, 8 kVA
Compressed Air: 0.6-0.8 MPa, 500 L/min
Dicing Water: 0.2-0.4 MPa, 200 L/min
Cooling Water: 0.2-0.4 MPa, 300 L/min
Exhaust Airflow: 8.0 m³/min (ANR)
Dimensions: 1200 mm (W) × 1600 mm (D) × 1800 mm (H)
Weight: 2200 kg
The process is a two-step "Laser-Modify-and-Cleave" method:
Laser Internal Modification (Stealth Dicing):
A pulsed IR laser is focused inside the SiC wafer, creating a continuous layer of modified material (a perforation line) without affecting the surface.
The DRA system ensures this modified layer is perfectly placed regardless of wafer thickness variations.
Cleavage / Splitting:
Method A (Blade Cleavage): A ultra-thin blade (5µm) is precisely aligned to the laser path using a high-precision visual system. It applies a quick, localized force to fracture the wafer along the pre-weakened laser line.
Method B (Vacuum Cracking): A vacuum force is applied to expand a protective film mounted on the wafer, mechanically pulling the wafer apart along the laser scribe lines. Ideal for delicate, small-grain products.
Orientation: Chip-facing upwards.
Precision Cleavage: The chopping knife acts directly on the chip with visual positioning, ensuring contact is only made within the pre-defined scratch path.
Front-Side Protection: To further protect the wafer and reduce edge chipping risk, a 25µm non-adhesive protective film can be applied to the front side. This prevents direct blade contact and dissipates pressure away from the cutting path.
High Yield: This technology, proven in silicon, sapphire, and glass industries, achieves yields exceeding 99.6%. It offers superior positioning accuracy, effectively reduces edge collapse, and eliminates incomplete or twin-crystal fractures.
DS9260 Technical Parameters
| Category | Parameter | Specification |
|---|---|---|
| Basic Parameters | Processing Size | 12 inches |
| Groove Depth | 0-5 mm | |
| Groove Width | 0.015-0.5 mm | |
| Worktable Flatness | ±1 μm | |
| X/Y-Axis | Drive Method | Linear Motor |
| Effective Stroke | 310 mm | |
| Motion Resolution | 0.1 μm | |
| Speed Range | 1-800 mm/s | |
| Z-Axis | Drive Method | Servo Motor + Ball Screw |
| Effective Stroke | 40 mm | |
| Motion Resolution | 0.1 μm | |
| Single-Step Positioning Accuracy | 1 μm | |
| Full-Stroke Positioning Accuracy | 3 μm | |
| θ-Axis | Drive Method | Servo Motor + Harmonic Drive |
| Rotation Range | 0-360° | |
| Motion Resolution | 0.001° | |
| Repeat Positioning Accuracy | ±2 arcsec | |
| Spindle System | Rotation Speed | 1,000-60,000 rpm |
| Output Power | 2.2 kW × 2 | |
| Alignment System | Dual FOV CCD + Laser Positioning | |
| Utility Requirements | Power Supply | AC 380V, 50/60 Hz, 8 kVA |
| Compressed Air | 0.6-0.8 MPa, 500 L/min | |
| Dicing Water | 0.2-0.4 MPa, 200 L/min | |
| Cooling Water | 0.2-0.4 MPa, 300 L/min | |
| Exhaust Airflow | 8.0 m³/min (ANR) | |
| Physical Specifications | Dimensions | 1200 × 1600 × 1800 mm (W×D×H) |
| Weight | 2200 kg | |
| Environmental Requirements | Temperature | 20-25°C (±1°C) |
| Humidity | 40-60% RH | |
| Compressed Air Quality | Dew point ≤ -15°C, Oil ≤ 0.1 ppm |
Silicon Wafers, PCB, Ceramics, Glass, Hard-Coated Lithium, Aluminum Oxide, Quartz, Lithium with Coating
Loading: Lower pick-and-place arm retrieves material from the cassette and transfers it to the pre-alignment station, then to the worktable.
Dicing: Precision dicing is performed on the worktable.
Cleaning: Upper pick-and-place arm moves finished products to the cleaning station for two-fluid cleaning and drying.
Unloading: Lower pick-and-place arm returns finished products to the cassette via the pre-alignment station.
High Efficiency: Full automation reduces manual intervention.
High Precision: Advanced motion control ensures machining accuracy.
Intelligent Operation: Multiple detection functions guarantee processing quality.
Wide Compatibility: Supports various materials and process requirements.
Enhanced Stability: Strict environmental requirements ensure long-term reliable operation.
Jiangsu Himalaya Semiconductor Co., Ltd.
Precision Solutions for Semiconductor Manufacturing
We specialize in advanced semiconductor equipment, with a core focus on high-precision wafer dicing saws. Our flagship DS9260 12-inch dual-spindle dicing machine delivers exceptional accuracy and efficiency for processing materials like silicon, SiC, GaAs, and quartz. Designed for reliability and automation, our equipment helps global manufacturers optimize yield and performance in semiconductor production.
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