Advanced Laser Technology for Quick GaN Layer Separation

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  • 4 yrs

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Product Highlights

  • High-Speed Processing: Scanning speed up to 5000 mm/s for efficient wafer processing.
  • Versatile Wafer Support: Processes 4-inch, 6-inch, and 8-inch planar and PSS wafers.
  • Smart Process Control: Automatic laser power monitoring and real-time adjustment.
  • Flexible Customization: Flexible customization options available for specific needs.

Product Images of Advanced Laser Technology for Quick GaN Layer Separation

Advanced Laser Technology for Quick GaN Layer Separation
Advanced Laser Technology for Quick GaN Layer Separation pictures & photos
Advanced Laser Technology for Quick GaN Layer Separation
Advanced Laser Technology for Quick GaN Layer Separation pictures & photos
Advanced Laser Technology for Quick GaN Layer Separation
Advanced Laser Technology for Quick GaN Layer Separation pictures & photos
Advanced Laser Technology for Quick GaN Layer Separation
Advanced Laser Technology for Quick GaN Layer Separation pictures & photos
Advanced Laser Technology for Quick GaN Layer Separation
Advanced Laser Technology for Quick GaN Layer Separation pictures & photos
Advanced Laser Technology for Quick GaN Layer Separation
Advanced Laser Technology for Quick GaN Layer Separation pictures & photos
Advanced Laser Technology for Quick GaN Layer Separation
  • Advanced Laser Technology for Quick GaN Layer Separation
  • Advanced Laser Technology for Quick GaN Layer Separation
    Advanced Laser Technology for Quick GaN Layer Separation
  • Advanced Laser Technology for Quick GaN Layer Separation
    Advanced Laser Technology for Quick GaN Layer Separation
  • Advanced Laser Technology for Quick GaN Layer Separation
    Advanced Laser Technology for Quick GaN Layer Separation
  • Advanced Laser Technology for Quick GaN Layer Separation
    Advanced Laser Technology for Quick GaN Layer Separation
  • Advanced Laser Technology for Quick GaN Layer Separation
    Advanced Laser Technology for Quick GaN Layer Separation
  • Advanced Laser Technology for Quick GaN Layer Separation
    Advanced Laser Technology for Quick GaN Layer Separation

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Product Description

Product Description

Advanced Laser Technology for Quick GaN Layer Separation

SLO-V3080A LED Laser Lift-Off Equipment

The SLO-V3080A is a state-of-the-art laser lift-off (LLO) system engineered for high-volume, high-yield production of LED devices. It is designed to perform the critical process of cleanly separating GaN epitaxial layers from sapphire substrates, a fundamental step in manufacturing conventional, mini-, and micro-LEDs.

Engineered for precision and reliability, this system integrates advanced laser technology, high-speed automation, and intelligent process control to deliver superior performance and exceptional operational value in a 24/7 production environment.

Key Features

  • Utilizes DPSS solid-state laser technology.

  • Compatible Products: Planar wafers / PSS substrates for conventional vertical structure, mini-LED, and micro-LED products.

  • Efficient loading/unloading mechanism supporting automatic handling of 4-inch, 6-inch, and 8-inch wafers.

  • Automatic laser power monitoring and adjustment to ensure stable lift-off.

  • High-speed, high-precision galvanometer system for efficient and accurate processing.

  • Low-damage lift-off, high yield rate, capable of stable 24/7 continuous operation with low running costs.

  • Comprehensive log files, compatible with SECS/GEM, for uploading and saving process parameters and data.

  • Equipped with an EFU (Equipment Fan Filter Unit) to maintain internal cleanliness.

Advanced Laser Technology for Quick GaN Layer Separation
Advanced Laser Technology for Quick GaN Layer Separation
Advanced Laser Technology for Quick GaN Layer Separation
Advanced Laser Technology for Quick GaN Layer Separation
 

Product Parameters

Key Parameters:

  • Processable Sizes: 4-inch, 6-inch, and 8-inch wafers.

  • Laser & Optical Path: UV laser, with a maximum processing power ≥ 1W.

  • Galvanometer & Control System:

    • Maximum Speed: 5000 mm/s

    • Precision: ±15 µm

  • Processing Modes:

    • Spiral pattern (outward to inward)

    • Linear fill pattern

  • Laser Processing Efficiency: 240 seconds per wafer (4-inch planar wafer)

  • Lift-off Yield Rate: Visual yield ≥ 98% (4-inch planar wafer)

  • Equipment Uptime: ≥ 95%

    Advanced Laser Technology for Quick GaN Layer Separation
    Parameter Category Specification Details
    Processable Sizes 4-inch, 6-inch, and 8-inch wafers
    Laser & Optical Path UV laser, maximum processing power ≥ 1W
    Galvanometer Maximum Speed 5000 mm/s
    Galvanometer Precision ±15 µm
    Processing Modes Spiral pattern (outward to inward), Linear fill pattern
    Laser Processing Efficiency 240 seconds per wafer (4-inch planar wafer)
    Lift-off Yield Rate Visual yield ≥ 98% (4-inch planar wafer)
    Equipment Uptime ≥ 95%

    Applications

     

  • Product Type: LED Laser Lift-off Equipment

  • Model: SLO-V3080A

  • Primary Function: Separation of GaN epitaxial layers from sapphire substrates (Laser Lift-off)

  • Target Industry: LED manufacturing

  • Application Scope: Suitable for laser lift-off of LED wafers, enabling the separation of GaN epitaxial layers from sapphire substrates.
     

    Advanced Laser Technology for Quick GaN Layer Separation
    Advanced Laser Technology for Quick GaN Layer Separation
     

    Our Clients

    Advanced Laser Technology for Quick GaN Layer Separation
    We are privileged to collaborate deeply with various renowned partners across the semiconductor equipment ecosystem. Globally, we work with industry leaders such as Honeywell, Foxconn, and HP; domestically, we partner with top enterprises including Sunny Optical Technology, Sanan Optoelectronics, HT-Tech, Tsinghua Tongfang, TUS Holdings, and TCL. Additionally, we join hands with leading academic institutions like Xi'an Jiaotong University and Northwestern Polytechnical University, leveraging their research capabilities to drive technological innovation and facilitate the implementation of cutting-edge solutions in the semiconductor equipment sector.

    Packaging & Shipping

    Advanced Laser Technology for Quick GaN Layer Separation
    Advanced Laser Technology for Quick GaN Layer Separation

    Packaging & Freight Services

    We ensure your semiconductor equipment arrives in perfect condition, anywhere in the world.

    Secure Packaging: Protected with shock-absorbing bubble foam inside a robust wooden crate for maximum transit safety.

    Global Logistics: We arrange and manage reliable shipping via road, sea, and air freight to meet your timeline and budget needs.

    Your precision equipment is handled with care from our door to yours.

    FAQ

    Advanced Laser Technology for Quick GaN Layer Separation
    Frequently Asked Questions (FAQ) - SLO-V3080A Laser Lift-Off System

    1. What is the primary function of the SLO-V3080A?
    The SLO-V3080A is designed for Laser Lift-Off (LLO), a critical step in LED manufacturing where a laser is used to precisely separate the GaN epitaxial layer from the sapphire substrate, enabling the production of vertical structure LED chips.

    2. What types of wafers and LED products is it compatible with?
    The system is highly versatile and can process:

  • Wafer Types: Planar wafers and PSS (Patterned Sapphire Substrate) wafers.

  • Wafer Sizes: 4-inch, 6-inch, and 8-inch.

  • LED Technologies: Conventional vertical structure LEDs, as well as advanced mini-LED and micro-LED products.

  • 4. How does the system ensure consistent and stable processing?
    The equipment features automatic laser power monitoring and adjustment. This system continuously checks the laser output and makes real-time corrections to ensure every wafer receives consistent energy, which is crucial for stable lift-off and high yield.

    5. What is the processing speed and precision?

  • Speed: The high-speed galvanometer can achieve scanning speeds of up to 5000 mm/s.

  • Precision: The positioning accuracy is ±15 µm, ensuring precise laser patterning and minimal damage.

  • 3. What laser technology does the equipment use?
    It employs a DPSS (Diode-Pumped Solid-State) laser in the UV (ultraviolet) spectrum. This type of laser is known for its stability, precision, and suitability for the LLO process.

About the Supplier

This supplier has been audited by BV. Verify the report on the official BV website with ID "MIC-ASI2342144". Items marked "verified" are certified.

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Jiangsu Himalaya Semiconductor Co., Ltd.
Jiangsu Himalaya Semiconductor Co., Ltd.
Jiangsu Himalaya Semiconductor Co., Ltd.
Jiangsu Himalaya Semiconductor Co., Ltd.
Jiangsu Himalaya Semiconductor Co., Ltd.
Jiangsu Himalaya Semiconductor Co., Ltd.
Jiangsu Himalaya Semiconductor Co., Ltd.
Jiangsu Himalaya Semiconductor Co., Ltd.

About Our Factory & Business Background

Address
Room 146, Office 3, No. 7, Sufu, Qianfeng Village, Mudu, Wuzhong District, Suzhou, Jiangsu, China
verified Registered Capital
100,000,000 RMB
verified Terms of Payment
LC, T/T, PayPal, Western Union
verified International Commercial Terms(Incoterms)
FOB, CIF, CFR, EXW
verified Average Lead Time
Peak Season Lead Time: 3-6 months
Off Season Lead Time: 1-3 months
verified Nearest Port
Shenzhen Port
verified Minimum Order Quantity
1 Set
verified Supply Chain Partners
30

Our Production Capability & Technical Expertise

verified Main Products
Die Bonder, Wire Bonding, Laser Marking(ID IC Wafer), Laser Grooving, Laser Cutting, Automatic Silicone Dispensing Equipment
verified Inspection Type for Finished Products
100% inspection(Visual inspection & Function inspection)
verified Inspection Method for Finished Products
Finished product checked by packing staff
verified Customization Options
Flexible customization
verified ODM Service Available
Yes
verified OEM Service Available
Yes
verified Traceability of Raw Materials
No

Our Industry Experience & Global Business Record

verified Year of Establishment
2019-09-12
verified Export Year
5 Years
verified Main Markets
Europe
verified Repeat Buyers Choice
80%~100%

FAQ

What is the primary function of the SLO-V3080A?
The SLO-V3080A is designed for Laser Lift-Off (LLO), a critical step in LED manufacturing where a laser is used to precisely separate the GaN epitaxial layer from the sapphire substrate, enabling the production of vertical structure LED chips.
What types of wafers and LED products is it compatible with?
The system is highly versatile and can process: Wafer Types: Planar wafers and PSS (Patterned Sapphire Substrate) wafers. Wafer Sizes: 4-inch, 6-inch, and 8-inch. LED Technologies: Conventional vertical structure LEDs, as well as advanced mini-LED and micro-LED products.
How does the system ensure consistent and stable processing?
The equipment features automatic laser power monitoring and adjustment. This system continuously checks the laser output and makes real-time corrections to ensure every wafer receives consistent energy, which is crucial for stable lift-off and high yield.
What laser technology does the equipment use?
It employs a DPSS (Diode-Pumped Solid-State) laser in the UV (ultraviolet) spectrum. This type of laser is known for its stability, precision, and suitability for the LLO process.

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