| Customization: | Available |
|---|---|
| After-sales Service: | Provided |
| Function: | High Temperature Resistance, Anti-Corrosion |
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Laser debonding, stripping and cleaning functions
Square top hat beam, benefits high debonding efficiency and low thermal damage
Real-time monitoring and automatic compensation, ensuring process stability
Providing wavelength- matching bonding adhesive
| Technical Specifications: Wafer Processing Laser System | ||
| Parameter | Specification | Notes / Implication |
| Laser Wavelength | 355nm / 1340nm | Dual-wavelength for versatility (UV for surface, IR for bulk processes) |
| Supported Wafer Size | 6 inch, 8 inch, 12 inch | Handles industry-standard sizes for high-volume production |
| Laser Power | 15W / 30W @ 355nm | High-power options for high-speed and various process demands |
| 100W @ 1340nm | ||
| Focused Spot Size | X: 0.2mm ~ 1.0mm | Adjustable rectangular spot for optimized energy distribution |
| Y: 0.2mm ~ 1.0mm | ||
| Laser Energy Density | 0.05 - 1 J/cm² | Precise fluence control for delicate processes without substrate damage |
| Typical Laser Scan Time | ≤ 100 sec @ 12 inch | Optimized for high throughput in a manufacturing environment |
This system is a high-precision, multi-wavelength laser platform engineered for advanced wafer-level processing applications. It is designed to handle large-scale production wafers up to 12 inches, delivering superior precision and process control.
Key Technical Specifications:
Laser Wavelength: 355nm (UV) / 1340nm (IR)
The dual-wavelength design provides versatility for a wide range of materials and applications, from surface processing with UV to bulk modification with IR.
Supported Wafer Size: 6 inch, 8 inch, 12 inch
Configurable for high-throughput production on industry-standard wafer sizes.
Laser Power: 15W / 30W @ 355nm, 100W @ 1340nm
High-power options enable high-speed processing and accommodate various process requirements.
Focused Spot Size: X: 0.2mm ~ 1.0mm, Y: 0.2mm ~ 1.0mm
An adjustable rectangular spot allows for optimized energy distribution and processing geometry for specific tasks like annealing or modification.
Laser Energy Density: 0.05 - 1 J/cm²
Wide and precise control over fluence ensures gentle ablation, precise annealing, or modification without substrate damage.
Typical Laser Scan Time: ≤ 100 seconds for a 12-inch wafer
Engineered for high throughput, making it suitable for volume manufacturing environments.
Since 2019, Jiangsu Himalaya Semiconductor has been a leading global exporter and integrator of semiconductor equipment. We serve a network of over 200 partners across 30+ countries, delivering a unique value proposition: we secure the most cost-effective solutions for our clients while guaranteeing suppliers streamlined, single-payment transactions to eliminate risk.
Our Core Expertise Includes:
Assembly & Packaging: Die Bonders, Wire Bonders, Dispensing Systems.
Laser Processing: Marking, Cutting, Grooving, Annealing, and Modification.
Automation: Automatic Dicing Saws for wafer packaging.
Custom Solutions: Including TGV, coating/plating machines, and exhaust handling systems.
Q1:How to choose a suitable machine?
A1:You can tell us the working piece material, size, and the request of machine function. We can recommend the most suitable machine according to our experience.
Q2:What is the warranty period for the equipment?
A2:One year warranty and 24 hours online professional technical support.
Q3:Why choose us?
A3:OEM/ODM/Designing service.
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