Advanced Laser Cutting Technology for LED Wafer Manufacturing

Product Description

Product Description

This series of equipment is designed specifically for the characteristics of silicon substrate wafer laser cutting, using ultraviolet lasers

A set of external optical path system, combined with high-precision CCD imaging positioning system and high-precision platform motion control, to achieve
Precision, efficient, and almost residue free cutting effect in the cutting groove.
Multi spot cutting technology for efficient and high-quality processing
Fully automatic loading and unloading, unmanned and fully automatic operation
U is compatible with the production of 2-inch, 4-inch, and 6-inch chips
U has automatic gluing and cleaning functions
The straightness and repeatability of the u platform are both within 1um
U has tangent and back cutting functions
Basic Principles
Focused by ultraviolet laser
High energy density enables processing
The surface temperature of the material rises sharply
, causing it to melt and vaporize instantly
, combined with platform sports, in
The material surface forms a series of cuts
Cutting width and cutting depth
Laser power (single pulse energy) is the main factor affecting cutting depth and cutting width. Testing was conducted on a silicon wafer, and the following figure shows changing the laser power
The curve plot of the measured cutting depth and cutting width. (Test use: laser frequency 70kHz, cutting speed 250mm/s, multi spot technology)
Processing method
Tangent+Splits
Single sided cutting (without cutting), direct cracking
Applied to partial silicon wafer cutting, ceramic wafer cutting, silicon glass cutting, etc
Tangent+back cut+crack
Suitable for cutting silicon-based substrate chips
The current mainstream processing methods for silicon-based substrate chips
Full cut (without splitting)
Suitable for silicon substrates and copper tungsten alloy substrates, cut with one knife without the need for cracks
Future development trends in laser processing
Mainly used for cutting LED red and yellow silicon wafer chips, as well as for cutting special materials such as ceramics and metals.
Silicon wafer substrate - GaN

Category	Parameter / Feature	Specification / Details
General Information	Model / Type	UV Laser Silicon Wafer Cutting System (for GaN on Si, Ceramics, Metals)
	Equipment Size (W x L x H)	1350 x 2170 x 1750 mm (Excludes tricolor warning light)
	Equipment Weight	3 tons (Excluding chiller)
	Main Application	Cutting of 2", 4", 6" silicon-based substrate wafers (LED, MEMS, etc.)
Laser Source	Type	Diode-pumped Solid-State (DPSS) UV Laser
	Wavelength	355 nm
	Average Power	≤ 15 W
	Pulse Frequency	0 - 500 kHz (Adjustable)
Motion & Positioning	X-Y Worktable Travel	300 x 600 mm
	Y-axis Repeatability	≤ ± 1 µm
	Straightness/Perpendicularity	≤ ± 1 µm (within ±50mm)
	Flatness	≤ ± 2 µm
	DD Motor (Rotary Axis)	Absolute Positioning: ±20 arc sec; Repeatability: ±3 arc sec

Equipped with a wide-angle camera, automatically recognizing contours
No need to distinguish between complete fragments for loading, no need to break
Slice setting and edge searching, greatly saving fragmented work
Business hours.
Equipped with a stable back cutting system
Providing stable imaging, combined with large-sized DD and mature cutting technology, it can perform 6 back cuts
Inch crystal wafer.
Multi light point technology
The machine is equipped with multi spot lenses, which effectively control the reflow and achieve better cutting results
Cutting technology is in a leading position in the same industry.
Equipped with high-precision workbenches
Full closed-loop control ensures displacement error within ± 1 µ m throughout the entire travel range, with excellent addition and subtraction
Speed performance, effectively improving the system's production capacity per unit time.
Stable and high-quality cleaning and gluing system
The machine is equipped with an automatic cleaning and gluing system,
Easy and convenient to use. Comprehensive monitoring of cleaning and coating
Glue parameters ensure the quality of chip cutting.
1. Self made/purchased laser 355 1
Ø Wavelength: 355nm
Ø Frequency: 0-500KHz adjustable
Ø Laser power ≤ 15W
2 XY workbench self-made 300 * 600 XY 1
Ø Travel: 300 * 600mm
Ø Y-axis repeated positioning accuracy ≤ 1 μ M
Ø Verticality (within ± 50mm): ± 1 μ M
Ø Flatness: ± 2 μ M
3 DD Motor Outsourcing/1
Ø Absolute positioning accuracy: ± 20arc sec
Ø Repetitive positioning accuracy: ± 3 arc sec
Ø Installation flatness ≤ 8 μ M
4 CCD outsourcing/4
1 wide-angle CCD: 5 million pixels
Two CCD cameras on the screen: 130W pixels
Ø Lower CCD 1: 1.3 million pixels
5 Cleaning and gluing device self-made/1
Ø Automatic cleaning and gluing
Ø With protective fluid and water flow monitoring
1. Power requirement: 220V/single-phase/50Hz/16A; Power grid fluctuations:<5%
2. Environmental temperature: 20-24 ºC; Temperature variation ± 1 ºC
3. Environmental humidity of 40-70% without condensation
4. Compressed air pressure of 0.65-0.75MPa, equipment interface pipe diameter φ twelve
5 Factory vacuum -0.06MPa~-0.08MPa, equipment interface pipe diameter φ eight
6. The cooling water chiller uses ordinary bottled purified water and is replaced once a month
7. Cleaning water pressure: Water pressure: 0.15~0.3MPa, water needs to be filtered, with a filtration diameter of 25 μ Within m
Inner diameter of interface for exhaust gas purification system equipment φ 100 bellows
9 Environmental vibration requirements: Foundation amplitude<5 μ Vibration acceleration<0.05G
10 occasions to avoid
Places with a lot of garbage, dust, and oil mist;
Places with high vibrations and impacts;
Places that can reach drugs and flammable and explosive materials;Places near high-frequency interference sources;
Places where temperature changes rapidly;
In environments with high concentrations of CO2, NOX, SOX, etc
The distance between the passage or wall between the equipment and other equipment shall not be less than 800mm
Ø Equipment size: 1350x2170x1750mm (W * L * H), height direction does not include tricolor lights
Ø Equipment weight: 3 tons (excluding chiller)

 

Exhibition & Customers

Jiangsu Himalaya Semiconductor Co., Ltd. Was established in 2019, mainly engaged in international trade and integration of semiconductor industry equipment. The equipment is currently imported and exported to over 30 countries, with over 200 customers and suppliers, aiming to control the procurement of the highest cost-effective products in the final stage for customers, and strive for one-time payment collection and risk avoidance for suppliers!
Our main products:Die Bonder,Wire Bonding,Laser Marking(ID IC Wafer),Laser Grooving,Laser Cutting(Glass Ceramics Wafers Packaging,Laser Internal Modification Machine Si /Sic Wafe,Laser Internal Modification Machine Lt/Ln Wafer,Laser Annealing Machine for Si/Sic,Automatic Dicing Saw Machine(Wafer Packaging)),Automatic Silicone Dispensing Equipment.

Packaging & Shipping

 

FAQ

Q1:How to choose a suitable machine?
A1:You can tell us the working piece material, size, and the request of machine function. We can recommend the most suitable machine according to our experience. 

Q2:What is the warranty period for the equipment?
A2:One year warranty and 24 hours online professional technical support.

Q3:How to choose a suitable machine?
A3:You can tell us the request of machine function. We can recommend the most suitable machine according to our experience.