| Customization: | Available |
|---|---|
| Oxide Quality: | High Oxide Quality |
| Wafer Size: | 2‘’ 3‘’ 100mm 150mm |
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The centrotherm c.OXIDATOR 150 high-temperature oxidation furnace has been developed for the special needs of SiC oxidation but can also be used for silicon oxidation. Thanks to the centrotherm Hydrox system c.OXIDATOR 150 supports wet oxidation processes. Temperatures up to 1500 °C and all other supported features open up new possibilities to SiC oxidation and the development of an oxide layer with low interface trap density (Dit) and high channel mobility. The outstanding reactor has been designed for high performance small footprint and low cost of ownership while offering highest process flexibility.
The design of tube and heating element inside the vacuum reactor chamber allow a secure use of toxic gases like O2 , N2 O, NO or WetOx. The oxidation process in NO atmosphere leads to an improved SiO2 /SiC interface, hence to higher channel mobility as well as improved stability and longevity of the oxide on SiC. c.OXIDATOR 150-5 is specifically developed for R&D, whereas c.OXIDATOR 150-50is designed for high-volume production.
Q1:How to choose a suitable machine?
A1:You can tell us the working piece material, size, and the request of machine function. We can recommend the most suitable machine according to our experience.
Q2:What is the warranty period for the equipment?
A2:One year warranty and 24 hours online professional technical support.
Q3:How to choose a suitable machine?
A3:You can tell us the request of machine function. We can recommend the most suitable machine according to our experience.
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