Industrial Furnace for Efficient Silicon Carbide Oxidation Solutions
| Customization: | Available |
|---|---|
| Oxide Quality: | High Oxide Quality |
| Wafer Size: | 100mm 150mm |
Suppliers with verified business licenses
Audited Supplier Audited by an independent third-party inspection agency
Find Similar Products
Basic Info.
- Model NO.
- C-150
- Transport Package
- Wooden Package
- Specification
- 2.4 Square Meters
- Trademark
- Himalaya
- Origin
- China
- HS Code
- 8541590000
- Production Capacity
- 300
Product Description
The centrotherm c.OXIDATOR 150 high-temperature oxidation furnace has been developed for the special needs of SiC oxidation but can also be used for silicon oxidation. Thanks to the centrotherm Hydrox system c.OXIDATOR 150 supports wet oxidation processes. Temperatures up to 1500 °C and all other supported features open up new possibilities to SiC oxidation and the development of an oxide layer with low interface trap density (Dit) and high channel mobility. The outstanding reactor has been designed for high performance small footprint and low cost of ownership while offering highest process flexibility.
The design of tube and heating element inside the vacuum reactor chamber allow a secure use of toxic gases like O2 , N2 O, NO or WetOx. The oxidation process in NO atmosphere leads to an improved SiO2 /SiC interface, hence to higher channel mobility as well as improved stability and longevity of the oxide on SiC. c.OXIDATOR 150-5 is specifically developed for R&D, whereas c.OXIDATOR 150-50is designed for high-volume production.
| Model | c.OXIDATOR 150-5 | c.OXIDATOR 150-50 |
|---|---|---|
| Wafer sizes | 2", 3", 100 mm, 150 mm | 2", 3", 100 mm, 150 mm |
| Batch size | 5 wafers | 50 wafers |
| Heating system | Resistive heating | Resistive heating |
| Possible process gases | Ar, N2, H2O, NO, N2O, O2 | Ar, N2, H2O, NO, N2O, O2 |
| Process pressure¹ | 100 mbar - atmospheric | 100 mbar - atmospheric |
| Max. power consumption | 25 kW | 45 kW |
| Power supply² | 400 V, 40 A (3 ph) 50 Hz | 400 V, 63 A (3 ph) 50 Hz |
| Dry air | 6 - 10 bar | 6 - 10 bar |
| Heat up ramp | max. 10 K/min | max. 10 K/min |
| Cooling water | 25 LPM | 25 LPM |
| Exhaust | 500 m³/h | 500 m³/h |
Q1:How to choose a suitable machine?
A1:You can tell us the working piece material, size, and the request of machine function. We can recommend the most suitable machine according to our experience.
Q2:What is the warranty period for the equipment?
A2:One year warranty and 24 hours online professional technical support.
Q3:How to choose a suitable machine?
A3:You can tell us the request of machine function. We can recommend the most suitable machine according to our experience.
){kind=link}
Send your message to this supplier
People who viewed this also viewed
Product Groups
Find Similar Products By Category
- Supplier Homepage
- Products
- Semiconductor Equipment
- Others Semiconductor Equipment
- Industrial Furnace for Efficient Silicon Carbide Oxidation Solutions