| Customization: | Available |
|---|---|
| After-sales Service: | 1 Year |
| Warranty: | 1 Year |
Suppliers with verified business licenses
Audited Supplier Audited by an independent third-party inspection agency
| Processing object | silicon carbide wafers |
| Laser type | Infrared picosecond pulsed laser |
| Cooling method | air-cooled |
| X-axis | stroke 450mm, resolution 0.1μm |
| Y-axis | stroke 700mm, resolution 0.1μm |
| Z-axis | stroke 20mm,resolution 0.1μm |
| θ axis | travel 120°, resolution 0.001° |
| Processing size | 6 inches(upgradeable to 8 inches) |
Equipment Advantage
1. Provide a complete set of split & expansion equipment, complete solution.
2. The process is mature and can be cut for different types of silicon carbide wafers.
3. Fast cutting speed, good cutting effect and high yield.
Applications
1. Aerospace and Power Electronics Industries.
2. Specifically designed for cutting wafers with silicon carbide (SiC) substrates used in microwave devices and power devices.
Samples
){kind=link}