Innovation Technologies Vacuum Ion Implantation System

• Customization: Available
• After-sales Service: 12 Months
• Condition: New
• Model NO.: lon001
• Speed: High Speed
• Precision: High Precision
• Certification: RoHS, ISO, CE
• Warranty: 12 Months
• Automatic Grade: Automatic
• Type: High-speed Chip Mounter
• Product Name: Ion Implanter
• Feature 1: High Precision
• Supported Ions: B, P, as, Al, S, H, Mg, Si
• Dose Accuracy: ≤ 1.5%
• Ion Source System: Solid Evaporation Source (700°C)
• Transport Package: Customized or Wooden Box Packaging
• Specification: Standard Specifications
• Trademark: Himalaya
• Origin: China
• Production Capacity: 10

Product Description

Innovation Technologies Vacuum Ion Implantation System 

Product Description

1. Product overview

Ion implanter is one of the high pressure small accelerators with the largest number of applications. It is the ion source to obtain the required ions, after the acceleration of several hundred thousand electron volts energy of the ion beam, used for semiconductor materials, large-scale integrated circuits and devices ion injection, but also used for metal materials surface modification and film making.

2. Device features

The maximum acceleration energy of univalent ion is ≥200keV, and the deceleration system is increased to achieve the energy range of univalent ion in 5keV~200keV

Available for 2, 3, 4, 6, 8 inch wafers and irregular fragments

B, P, As, Al, S, H, Mg, Si ions can be injected

Injection dose accuracy ≤1.5%

Ion implantation dose range: 1×1011 at/cm2 ~ 1×1016 at/cm2

Ion source part: ion source, ion source gas system and ion source extraction system

The ion source system is equipped with five vaporizers that generate ions from a solid evaporation source at a temperature of 700 ° C to achieve ion implantation from a solid source

Ion implantation tilt angles are 0° and 7°

Room temperature station: 0° and 7°; High temperature station: 0°

Beam adjustment system mainly includes: mass analyzer, beam convergence system, acceleration system, scanning system, beam detection and high voltage insulated transformer

The vacuum system mainly includes: Ion Source vacuum system, Beam Line vacuum system, End Station vacuum system, vacuum tubes and valves in the vacuum system and vacuum detection unit

Vacuum degree:

Ion Source vacuum: ≤7×10-4Pa

Beam Line vacuum: ≤7×10-5Pa

End Station vacuum: ≤7×10-5Pa
 

Ion Implanter System Specifications
Category	Specification / Feature
Maximum Acceleration	≥ 200 keV (for univalent ions)
Energy Range	5 keV to 200 keV (achieved via a deceleration system)
Wafer Compatibility	2", 3", 4", 6", 8" wafers, and irregular fragments
Supported Ions	B, P, As, Al, S, H, Mg, Si
Dose Accuracy	≤ 1.5%

 

Detailed Photos

 

Exhibition & Customers

Field Application

 

FAQ

Q1:How to choose a suitable machine?
A1:You can tell us the working piece material, size, and the request of machine function. We can recommend the most suitable machine according to our experience. 

Q2:What is the warranty period for the equipment?
A2:One year warranty and 24 hours online professional technical support.

Q3:Why choose us?
A3:OEM/ODM/Designing service.