Product Description
A single crystal growth furnace is a specialized piece of equipment used to produce single crystals from a melt or solution. These furnaces are crucial in various fields, including semiconductor manufacturing, materials science, and photonics, as they enable the growth of high-quality single crystals with specific properties.
Features:
(1) Lower pulling cost
(2) Batter quality
(3) Wider Compatiability
(4) Intelligent one-button pulling system
(5) International safety certifications
(6) Proven one stop ingot-wafer line integration
Product Parameters
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Temperature:
The temperature gradient and the temperature of the melt are critical. Low temperature gradients (5-15 °C/cm) are often preferred to maintain a planar melt-solid interface and reduce strain.
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Growth Rate:
Slow growth rates (0.1-0.5 mm/h) are generally necessary to avoid constitutional supercooling and interface breakdown.
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Atmosphere and Pressure:
The type of gas (e.g., argon) and the pressure within the furnace affect the crystal growth process.
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Rotation Rate:
Rotating the crucible and/or the seed crystal can help maintain a stable melt and promote uniform crystal growth.
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Power:
The power applied to the heating elements (e.g., laser power in laser-heated methods) needs to be carefully controlled.
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Feed Rod and Seed Rod Speed:
The speed at which the feed rod (source material) and seed rod (seed crystal) are translated or rotated influences the growth process.
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Crucible and Crystal Radius:
The dimensions of the crucible and the growing crystal are important factors in determining the overall size and shape of the crystal.
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Magnetic Field (for some methods):
In techniques like the Czochralski method, a magnetic field can be applied to control melt convection.
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Material Properties:
The specific properties of the material being grown (e.g., melting point, thermal conductivity) will influence the optimal parameter settings.
Examples of Parameter Adjustments:
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Czochralski (CZ) Method:
Parameters like crucible and crystal rotation rates, pulling rate, and the strength and configuration of the magnetic field are adjusted to control the growth of silicon and other semiconductor crystals.
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Image Furnace Growth:
Parameters like the growth rate, temperature gradient, and the power of the heating lamps are adjusted to grow crystals like CrB2.
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Modified Furnace Growth:
Specific parameters like temperature gradients and thermal profiles are adjusted to grow crystals like AgGaS2.
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Floating Zone (FZ) Method:
Parameters like laser power, feed rod and seed rod speeds, and the stability of the molten zone are adjusted to grow crystals like Nd:YAG.
Importance of Parameter Control:
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Crystal Quality:
Properly adjusted parameters lead to high-quality single crystals with fewer defects and desired properties.
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Growth Stability:
Stable growth parameters prevent instabilities that can lead to polycrystal formation, cracking, or other defects.
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Reproducibility:
Consistent parameter settings ensure that crystals can be grown reproducibly with the same characteristics.
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FAQ
Q1:How to choose a suitable machine?
A1:You can tell us the working piece material, size, and the request of machine function. We can recommend the most suitable machine according to our experience.
Q2:What is the warranty period for the equipment?
A2:One year warranty and 24 hours online professional technical support.
Q3:How to choose a suitable machine?
A3:You can tell us the request of machine function. We can recommend the most suitable machine according to our experience.